| PART |
Description |
Maker |
| AP01L60T |
N-CHANNEL ENHANCEMENT MODE 160 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Advanced Power Electronics, Corp.
|
| DT105N10LOF-A DT105N16KOF-K DT105N16LOF-A DT105N12 |
160 A, 1000 V, SCR MODULE-5
160 A, 1600 V, SCR MODULE-5
160 A, 1200 V, SCR MODULE-5
160 A, 1400 V, SCR MODULE-5
120 A, 800 V, SCR MODULE-5
75 A, 800 V, SCR
100 A, 1600 V, SCR
160 A, 800 V, SCR
160 A, 600 V, SCR
|
Unisonic Technologies Co., Ltd.
|
| APT43F60B2 APT43F60L |
N-Channel FREDFET
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation
Microsemi, Corp.
|
| FCD600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m
|
Fairchild Semiconductor
|
| HDM160GS16-2 |
160 X 160 Dots Graphic, Low Power w/Touch Screen
|
HANTRONIX[Hantronix,Inc]
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| 2MBI600NT-060 |
600 A, 600 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
|
| MGP11N60ED_D ON1850 MGP11N60ED ON1849 |
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ON Semiconductor
|
| KS0794 |
160 COM / 160 SEG DRIVER FOR STN LCD
|
Samsung semiconductor
|
| PI6CV2304 PI6CV2304L PI6CV2304LE PI6CV2304W PI6CV2 |
160 MHz Clock Buffers 160 MHz的时钟缓冲器
|
Pericom Technology
PERICOM[Pericom Semiconductor Corporation]
Pericom Semiconductor Corp.
Pericom Semiconductor, Corp.
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
|
